SILICON CARBIDE POWER MOSFET 120 | STMicroelectronics
N-Channel 1200 V 36A (Tc) 278W (Tc) Through Hole HiP247
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Unit Price ($ / pc.)
7.176785 $
*
Available: 189 pcs.
Next delivery: 2919 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 52 Weeks **
Quantity
Price per unit*
100 pcs.
6.817946 $
500 pcs.
6.459107 $
1000 pcs.
6.100267 $
3000 pcs.
5.741428 $
10000 pcs.
5.382589 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The SCTW40N120G2V is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-247-3 package by STMicroelectronics made. The SCTW40N120G2V is using SPQ 30 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | STMicroelectronics |
| Series | - |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 18V |
| Vgs(th) (Max) @ Id | 4.9V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1233 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 278W (Tc) |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | HiP247 |
| Package / Case | TO-247-3 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 30 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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