P-CHANNEL -80V SOT-23, 164 M @ 1 | Vishay Siliconix
P-Channel 80 V 2.1A (Ta), 3A (Tc) 1.3W (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
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Unit Price ($ / pc.)
0.051255 $
*
Available: 192 pcs.
Next delivery: 2982 pcs.
Manufacturer Leadtime: 62 Weeks **
Description
The SI2387DS-T1-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-236-3, SC-59, SOT-23-3 package by Vishay Siliconix made. The SI2387DS-T1-GE3 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Vishay Siliconix |
Series | TrenchFET Gen IV |
Package | Tape & Reel (TR) |
Product Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80 V |
Current - Continuous Drain (Id) @ 25°C | 2.1A (Ta), 3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 164mOhm @ 2.1A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs | 10.2 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 395 pF @ 40 V |
FET Feature | - |
Power Dissipation (Max) | 1.3W (Ta), 2.5W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 (TO-236) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 3000 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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SI2387DS-T1-GE3 packaging