SILICON CARBIDE MOSFET, NCHANNEL | onsemi
N-Channel 650 V 62A (Tc) 242W (Tc) Surface Mount D2PAK-7
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Unit Price ($ / pc.)
4.034255 $
*
Available: 195 pcs.
Next delivery: 3045 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 6 Weeks **
Quantity
Price per unit*
100 pcs.
3.832542 $
500 pcs.
3.63083 $
1000 pcs.
3.429117 $
3000 pcs.
3.227404 $
10000 pcs.
3.025691 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The NTBG045N065SC1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-263-8, D2PAK (7 Leads + Tab), TO-263CA package by onsemi made. The NTBG045N065SC1 is using SPQ 800 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | onsemi |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 62A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 25A, 18V |
| Vgs(th) (Max) @ Id | 4.3V @ 8mA |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 18 V |
| Vgs (Max) | +22V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1890 pF @ 325 V |
| FET Feature | - |
| Power Dissipation (Max) | 242W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 800 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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