GANFET N-CH | Infineon Technologies

N-Channel 600 V 31A (Tc) 125W (Tc) Surface Mount PG-HSOF-8-3

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Unit Price ($ / pc.)
3.850875 $ *
Available: 196 pcs.
Next delivery: 3066 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 18 Weeks **
Quantity
Price per unit*
100 pcs.
3.658331 $
500 pcs.
3.465788 $
1000 pcs.
3.273244 $
3000 pcs.
3.0807 $
10000 pcs.
2.888156 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The IGT60R070D1ATMA4 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 8-PowerSFN package by Infineon Technologies made. The IGT60R070D1ATMA4 is using SPQ 2000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrInfineon Technologies
SeriesCoolGaN
PackageTape & Reel (TR)
Product StatusActive
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id1.6V @ 2.6mA
Vgs (Max)-10V
Input Capacitance (Ciss) (Max) @ Vds380 pF @ 400 V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-HSOF-8-3
Package / Case8-PowerSFN
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 2000 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes