MOSFET N-CH 900V 5A TO220SIS | Toshiba Semiconductor and Storage

N-Channel 900 V 5A (Ta) 45W (Tc) Through Hole TO-220SIS

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Unit Price ($ / pc.)
$ *
Available: 219 pcs.
Next delivery: 3549 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
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500 pcs.
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1000 pcs.
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3000 pcs.
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Description

The 2SK3565(Q,M) is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 Full Pack package by Toshiba Semiconductor and Storage made. The 2SK3565(Q,M) is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrToshiba Semiconductor and Storage
Seriesπ-MOSIV
PackageBulk
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)900 V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.5Ohm @ 3A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs28 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1150 pF @ 25 V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package / CaseTO-220-3 Full Pack
Base Product Number2SK3565
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 50 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
Previous
FDP7N50