MOSFET N-CH 100V 12A IPAK | onsemi

N-Channel 100 V 12A (Ta) 1.28W (Ta), 56.6W (Tc) Through Hole I-PAK

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Available: 229 pcs.
Next delivery: 3759 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
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Description

The NTD6600N-1G is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-251-3 Short Leads, IPak, TO-251AA package by onsemi made. The NTD6600N-1G is using SPQ 75 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
Mfronsemi
Series-
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs146mOhm @ 6A, 5V
Vgs(th) (Max) @ Id2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs20 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds700 pF @ 25 V
FET Feature-
Power Dissipation (Max)1.28W (Ta), 56.6W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Base Product NumberNTD66
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 75 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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