MOSFET N-CH 30V 27A DIRECTFET | Infineon Technologies
N-Channel 30 V 27A (Ta), 94A (Tc) 3.6W (Ta), 42W (Tc) Surface Mount DIRECTFET MT
Images may differ 
Unit Price ($ / pc.)
$
*
Available: 242 pcs.
Next delivery: 4032 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0 $
500 pcs.
0 $
1000 pcs.
0 $
3000 pcs.
0 $
10000 pcs.
0 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The IRF6607TR1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant DirectFET Isometric MT package by Infineon Technologies made. The IRF6607TR1 is using SPQ 1000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Infineon Technologies |
| Series | HEXFET |
| Package | Tape & Reel (TR) |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 27A (Ta), 94A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 7V |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 4.5 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 6930 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 42W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET MT |
| Package / Case | DirectFET Isometric MT |
Download
Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 1000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
Search