MOSFET N-CH 12V 21.5A 8SO | Vishay Siliconix

N-Channel 12 V 21.5A (Tc) 2.5W (Ta), 4.45W (Tc) Surface Mount 8-SOIC

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Available: 247 pcs.
Next delivery: 4137 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
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Description

The SI4866BDY-T1-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 8-SOIC (0.154", 3.90mm Width) package by Vishay Siliconix made. The SI4866BDY-T1-GE3 is using SPQ 2500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrVishay Siliconix
SeriesTrenchFET
PackageTape & Reel (TR)
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12 V
Current - Continuous Drain (Id) @ 25°C21.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs5.3mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs80 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds5020 pF @ 6 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 4.45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)
Base Product NumberSI4866
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 2500 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes