MOSFET N-CH 30V 35A TO251-3 | Infineon Technologies

N-Channel 30 V 35A (Tc) 38W (Tc) Through Hole PG-TO251-3-11

default L
Images may differ 
Unit Price ($ / pc.)
$ *
Available: 249 pcs.
Next delivery: 4179 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0 $
500 pcs.
0 $
1000 pcs.
0 $
3000 pcs.
0 $
10000 pcs.
0 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The IPS105N03LGAKMA1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-251-3 Stub Leads, IPak package by Infineon Technologies made. The IPS105N03LGAKMA1 is using SPQ 1500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrInfineon Technologies
SeriesOptiMOS
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs14 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 15 V
FET Feature-
Power Dissipation (Max)38W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3-11
Package / CaseTO-251-3 Stub Leads, IPak
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 1500 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes