MOSFET N-CH 55V 8CDIP | Honeywell Aerospace
N-Channel 55 V 50W (Tj) Through Hole 8-CDIP-EP
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Available: 254 pcs.
Next delivery: 4284 pcs.
Manufacturer Leadtime: **
Description
The HTNFET-D is a common industry Single FETs, MOSFETs housed in a RoHS compliant 8-CDIP Exposed Pad package by Honeywell Aerospace made. The HTNFET-D is using SPQ 1 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Honeywell Aerospace |
Series | HTMOS |
Package | Bulk |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55 V |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | 5V |
Rds On (Max) @ Id, Vgs | 400mOhm @ 100mA, 5V |
Vgs(th) (Max) @ Id | 2.4V @ 100μA |
Gate Charge (Qg) (Max) @ Vgs | 4.3 nC @ 5 V |
Vgs (Max) | 10V |
Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 28 V |
FET Feature | - |
Power Dissipation (Max) | 50W (Tj) |
Operating Temperature | -55°C ~ 225°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | 8-CDIP-EP |
Package / Case | 8-CDIP Exposed Pad |
Base Product Number | HTNFET |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 1 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |