MOSFET N-CH 1000V 4A TO220AB | Toshiba Semiconductor and Storage
N-Channel 1000 V 4A (Ta) 100W (Tc) Through Hole TO-220AB
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Available: 256 pcs.
Next delivery: 4326 pcs.
Manufacturer Leadtime: **
Description
The 2SK1119(F) is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by Toshiba Semiconductor and Storage made. The 2SK1119(F) is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Toshiba Semiconductor and Storage |
Series | - |
Package | Tube |
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 1000 V |
Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.8Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 100W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Base Product Number | 2SK1119 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 50 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |