MOSFET N-CH 600V 20A TO3P | Toshiba Semiconductor and Storage

N-Channel 600 V 20A (Ta) 150W (Tc) Through Hole TO-3P(N)

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Unit Price ($ / pc.)
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Available: 256 pcs.
Next delivery: 4326 pcs.
Available in 2 Weeks
Manufacturer Leadtime: **
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500 pcs.
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Description

The 2SK3906(Q) is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-3P-3, SC-65-3 package by Toshiba Semiconductor and Storage made. The 2SK3906(Q) is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrToshiba Semiconductor and Storage
Series-
PackageBulk
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs330mOhm @ 10A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4250 pF @ 25 V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P(N)
Package / CaseTO-3P-3, SC-65-3
Base Product Number2SK3906
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 50 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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