MOSFET N-CH 80V 80A TO262-3 | Infineon Technologies
N-Channel 80 V 80A (Tc) 150W (Tc) Through Hole PG-TO262-3
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Available: 258 pcs.
Next delivery: 4368 pcs.
Manufacturer Leadtime: **
Description
The IPI057N08N3 G is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-262-3 Long Leads, I2PAK, TO-262AA package by Infineon Technologies made. The IPI057N08N3 G is using SPQ 500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Infineon Technologies |
Series | OptiMOS |
Package | Tube |
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80 V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 5.7mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 90μA |
Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4750 pF @ 40 V |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3 |
Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
Base Product Number | IPI057N |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 500 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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IPI057N08N3 G ECAD module
IPI057N08N3 G specification
IPI057N08N3 G certificate