MOSFET N-CH 100V 13A TO262-3 | Infineon Technologies

N-Channel 100 V 13A (Tc) 31W (Tc) Through Hole PG-TO262-3

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Unit Price ($ / pc.)
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Available: 258 pcs.
Next delivery: 4368 pcs.
Available in 2 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
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500 pcs.
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1000 pcs.
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3000 pcs.
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10000 pcs.
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Description

The IPI80CN10N G is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-262-3 Long Leads, I2PAK, TO-262AA package by Infineon Technologies made. The IPI80CN10N G is using SPQ 500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrInfineon Technologies
SeriesOptiMOS
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs80mOhm @ 13A, 10V
Vgs(th) (Max) @ Id4V @ 12μA
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds716 pF @ 50 V
FET Feature-
Power Dissipation (Max)31W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Base Product NumberIPI80C
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 500 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes