MOSFET N-CH 20V 230MA 3DFN | Diodes Incorporated

N-Channel 20 V 230mA (Ta) 350mW (Ta) Surface Mount X2-DFN1006-3

default L
Images may differ 
Unit Price ($ / pc.)
$ *
Available: 269 pcs.
Next delivery: 4599 pcs.
Available in 2 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0 $
500 pcs.
0 $
1000 pcs.
0 $
3000 pcs.
0 $
10000 pcs.
0 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The DMN26D0UFB4-7 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 3-XFDFN package by Diodes Incorporated made. The DMN26D0UFB4-7 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrDiodes Incorporated
Series-
PackageTape & Reel (TR)
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs3Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id1.1V @ 250μA
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds14.1 pF @ 15 V
FET Feature-
Power Dissipation (Max)350mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageX2-DFN1006-3
Package / Case3-XFDFN
Base Product NumberDMN26
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 3000 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
Previous
DMG2302U-7