MOSFET P-CH 16V 2.5A DFN2015H4-3 | Diodes Incorporated

P-Channel 16 V 2.5A (Ta) 400mW (Ta) Surface Mount DFN2015H4-3

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Unit Price ($ / pc.)
$ *
Available: 270 pcs.
Next delivery: 4620 pcs.
Available in 2 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
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500 pcs.
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3000 pcs.
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**Subject to prior sale
Description

The DMG3415UFY4-7 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 3-XFDFN package by Diodes Incorporated made. The DMG3415UFY4-7 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrDiodes Incorporated
Series-
PackageTape & Reel (TR)
Product StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)16 V
Current - Continuous Drain (Id) @ 25°C2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs39mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id1V @ 250μA
Gate Charge (Qg) (Max) @ Vgs10 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds281.9 pF @ 10 V
FET Feature-
Power Dissipation (Max)400mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDFN2015H4-3
Package / Case3-XFDFN
Base Product NumberDMG3415
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 3000 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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