MOSFET N-CH 150V 375A DIRECTFET | Infineon Technologies
N-Channel 150 V 67A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount DirectFET Isometric L8
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Unit Price ($ / pc.)
1.523805 $
*
Available: 270 pcs.
Next delivery: 4620 pcs.
Available in 2 Weeks
Manufacturer Leadtime: 12 Weeks **
Quantity
Price per unit*
100 pcs.
1.447615 $
500 pcs.
1.371425 $
1000 pcs.
1.295234 $
3000 pcs.
1.219044 $
10000 pcs.
1.142854 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The IRF7779L2TRPBF is a common industry Single FETs, MOSFETs housed in a RoHS compliant DirectFET Isometric L8 package by Infineon Technologies made. The IRF7779L2TRPBF is using SPQ 4000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Infineon Technologies |
| Series | HEXFET |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 40A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6660 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 3.3W (Ta), 125W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DirectFET Isometric L8 |
| Package / Case | DirectFET Isometric L8 |
| Base Product Number | IRF7779 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 4000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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