MOSFET N-CH 100V 43A TO252-3 | Infineon Technologies
N-Channel 100 V 43A (Tc) 71W (Tc) Surface Mount PG-TO252-3
Images may differ
Available: 283 pcs.
Next delivery: 4893 pcs.
Manufacturer Leadtime: **
Description
The IPD180N10N3GBTMA1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant - package by Infineon Technologies made. The IPD180N10N3GBTMA1 is using SPQ 2500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Infineon Technologies |
Series | OptiMOS |
Package | Tape & Reel (TR) |
Product Status | Discontinued |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 18mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 33μA |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 50 V |
FET Feature | - |
Power Dissipation (Max) | 71W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | - |
Base Product Number | IPD180N |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 2500 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
Search
IPD180N10N3GBTMA1 ECAD module
IPD180N10N3GBTMA1 datesheet
IPD180N10N3GBTMA1 specification
IPD180N10N3GBTMA1 certificate
IPD180N10N3GBTMA1 supplier
IPD180N10N3GBTMA1 component
IPD180N10N3GBTMA1 substitute
IPD180N10N3GBTMA1 packaging
IPD180N10N3GBTMA1 sources