MOSFET N-CH 20V 7.9A 6TSOP | Vishay Siliconix
N-Channel 20 V 7.9A (Tc) 1.7W (Ta), 2.7W (Tc) Surface Mount 6-TSOP
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Unit Price ($ / pc.)
0.05625 $
*
Available: 294 pcs.
Next delivery: 5124 pcs.
Available in 2 Weeks
Manufacturer Leadtime: 27 Weeks **
Quantity
Price per unit*
100 pcs.
0.053438 $
500 pcs.
0.050625 $
1000 pcs.
0.047813 $
3000 pcs.
0.045 $
10000 pcs.
0.042188 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The SI3460DDV-T1-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant SOT-23-6 Thin, TSOT-23-6 package by Vishay Siliconix made. The SI3460DDV-T1-GE3 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Vishay Siliconix |
| Series | TrenchFET |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 7.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 5.1A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 8 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 666 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta), 2.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-TSOP |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Base Product Number | SI3460 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 3000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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