MOSFET N-CH 100V 20A 8-SOIC | Vishay Siliconix
N-Channel 100 V 20A (Tc) Surface Mount 8-SOIC
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Available: 294 pcs.
Next delivery: 5124 pcs.
Manufacturer Leadtime: **
Description
The SI4190DY-T1-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 8-SOIC (0.154", 3.90mm Width) package by Vishay Siliconix made. The SI4190DY-T1-GE3 is using SPQ 2500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Vishay Siliconix |
Series | - |
Package","values":[{}],"isFilterable":true} | |
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Rds On (Max) @ Id, Vgs | 8.8mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id | 2.8V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 50 V |
FET Feature | - |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOIC |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Base Product Number | SI4190 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 2500 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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SI4190DY-T1-GE3 datesheet
SI4190DY-T1-GE3 specification
SI4190DY-T1-GE3 certificate
SI4190DY-T1-GE3 component
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SI4190DY-T1-GE3 packaging