MOSFET N-CH 30V 20A/40A PQFN | Infineon Technologies
N-Channel 30 V 20A (Ta), 40A (Tc) 2.8W (Ta), 37W (Tc) Surface Mount PQFN (3x3)
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Unit Price ($ / pc.)
0.236705 $
*
Available: 295 pcs.
Next delivery: 5145 pcs.
Available in 2 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0.22487 $
500 pcs.
0.213035 $
1000 pcs.
0.201199 $
3000 pcs.
0.189364 $
10000 pcs.
0.177529 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The IRFHM830DTRPBF is a common industry Single FETs, MOSFETs housed in a RoHS compliant 8-VQFN Exposed Pad package by Infineon Technologies made. The IRFHM830DTRPBF is using SPQ 4000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Infineon Technologies |
| Series | HEXFET |
| Package | Tape & Reel (TR) |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 50μA |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1797 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Ta), 37W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PQFN (3x3) |
| Package / Case | 8-VQFN Exposed Pad |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 4000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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