MOSFET P-CH 80V 2.2A SOT23-3 | Vishay Siliconix
P-Channel 80 V 2.2A (Tc) 760mW (Ta), 2.5W (Tc) Surface Mount SOT-23-3 (TO-236)
Images may differ
Unit Price ($ / pc.)
0.21235 $
*
Available: 312 pcs.
Next delivery: 5502 pcs.
Manufacturer Leadtime: 14 Weeks **
Description
The SI2337DS-T1-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-236-3, SC-59, SOT-23-3 package by Vishay Siliconix made. The SI2337DS-T1-GE3 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Vishay Siliconix |
Series | TrenchFET |
Package | Tape & Reel (TR) |
Product Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80 V |
Current - Continuous Drain (Id) @ 25°C | 2.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 270mOhm @ 1.2A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 40 V |
FET Feature | - |
Power Dissipation (Max) | 760mW (Ta), 2.5W (Tc) |
Operating Temperature | -50°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 (TO-236) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Base Product Number | SI2337 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 3000 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
Search
SI2337DS-T1-GE3 ECAD module
SI2337DS-T1-GE3 datesheet
SI2337DS-T1-GE3 specification
SI2337DS-T1-GE3 certificate
SI2337DS-T1-GE3 component
SI2337DS-T1-GE3 substitute
SI2337DS-T1-GE3 packaging