MOSFET N-CH 650V 2A TO220SIS | Toshiba Semiconductor and Storage
N-Channel 650 V 2A (Ta) 30W (Tc) Through Hole TO-220SIS
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Unit Price ($ / pc.)
0.2605 $
*
Available: 326 pcs.
Next delivery: 5796 pcs.
Available in 2 Weeks
Manufacturer Leadtime: 32 Weeks **
Quantity
Price per unit*
100 pcs.
0.247475 $
500 pcs.
0.23445 $
1000 pcs.
0.221425 $
3000 pcs.
0.2084 $
10000 pcs.
0.195375 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The TK2A65D(STA4,Q,M) is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 Full Pack package by Toshiba Semiconductor and Storage made. The TK2A65D(STA4,Q,M) is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Toshiba Semiconductor and Storage |
| Series | π-MOSVII |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.26Ohm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 4.4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220SIS |
| Package / Case | TO-220-3 Full Pack |
| Base Product Number | TK2A65 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 50 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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