MOSFET P-CH 20V 3.2A 6DSBGA | Texas Instruments
P-Channel 20 V 3.2A (Ta) 1W (Ta) Surface Mount 6-DSBGA (1x1.5)
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Unit Price ($ / pc.)
0.07504 $
*
Available: 354 pcs.
Next delivery: 6384 pcs.
Available in 3 Weeks
Manufacturer Leadtime: 6 Weeks **
Quantity
Price per unit*
100 pcs.
0.071288 $
500 pcs.
0.067536 $
1000 pcs.
0.063784 $
3000 pcs.
0.060032 $
10000 pcs.
0.05628 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The CSD25211W1015 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 6-UFBGA, DSBGA package by Texas Instruments made. The CSD25211W1015 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Texas Instruments |
| Series | NexFET |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 1.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 4.1 nC @ 4.5 V |
| Vgs (Max) | -6V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-DSBGA (1x1.5) |
| Package / Case | 6-UFBGA, DSBGA |
| Base Product Number | CSD25211 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 3000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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