MOSFET N-CH 500V 3A TO252AA | Vishay Siliconix
N-Channel 500 V 3A (Tc) 69W (Tc) Surface Mount DPAK
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Unit Price ($ / pc.)
0.147715 $
*
Available: 367 pcs.
Next delivery: 6657 pcs.
Manufacturer Leadtime: 8 Weeks **
Description
The SIHD3N50D-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant Standar package by Vishay Siliconix made. The SIHD3N50D-GE3 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.2Ohm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 175 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 69W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
| Base Product Number | SIHD3 |
Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 3000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
Search
SIHD3N50D-GE3 ECAD module
SIHD3N50D-GE3 specification
SIHD3N50D-GE3 certificate