MOSFET N-CH 600V 9.7A TO220 | Toshiba Semiconductor and Storage
N-Channel 600 V 9.7A (Ta) 100W (Tc) Through Hole TO-220
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Unit Price ($ / pc.)
0.6875 $
*
Available: 434 pcs.
Next delivery: 8064 pcs.
Available in 3 Weeks
Manufacturer Leadtime: 52 Weeks **
Quantity
Price per unit*
100 pcs.
0.653125 $
500 pcs.
0.61875 $
1000 pcs.
0.584375 $
3000 pcs.
0.55 $
10000 pcs.
0.515625 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The TK10E60W,S1VX is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by Toshiba Semiconductor and Storage made. The TK10E60W,S1VX is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Toshiba Semiconductor and Storage |
| Series | DTMOSIV |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 4.9A, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 500μA |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 300 V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
| Base Product Number | TK10E60 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 50 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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