MOSFET P-CH 20V 5.9A TO236 | Vishay Siliconix
P-Channel 20 V 5.9A (Tc) 1W (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)
Images may differ 
Unit Price ($ / pc.)
0.02986 $
*
Available: 437 pcs.
Next delivery: 8127 pcs.
Available in 3 Weeks
Manufacturer Leadtime: 27 Weeks **
Quantity
Price per unit*
100 pcs.
0.028367 $
500 pcs.
0.026874 $
1000 pcs.
0.025381 $
3000 pcs.
0.023888 $
10000 pcs.
0.022395 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The SI2365EDS-T1-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-236-3, SC-59, SOT-23-3 package by Vishay Siliconix made. The SI2365EDS-T1-GE3 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Vishay Siliconix |
| Series | TrenchFET |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 5.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 4A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 8 V |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 1.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | SI2365 |
Download
Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 3000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
Search