MOSFET N-CH 600V 100A TO3P | Toshiba Semiconductor and Storage
N-Channel 600 V 100A (Ta) 797W (Tc) Through Hole TO-3P(L)
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Unit Price ($ / pc.)
12.9987 $
*
Available: 444 pcs.
Next delivery: 8274 pcs.
Available in 3 Weeks
Manufacturer Leadtime: 52 Weeks **
Quantity
Price per unit*
100 pcs.
12.348765 $
500 pcs.
11.69883 $
1000 pcs.
11.048895 $
3000 pcs.
10.39896 $
10000 pcs.
9.749025 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The TK100L60W,VQ is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-3PL package by Toshiba Semiconductor and Storage made. The TK100L60W,VQ is using SPQ 100 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Toshiba Semiconductor and Storage |
| Series | DTMOSIV |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 360 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 15000 pF @ 30 V |
| FET Feature | - |
| Power Dissipation (Max) | 797W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P(L) |
| Package / Case | TO-3PL |
| Base Product Number | TK100L60 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 100 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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