MOSFET P-CH 20V PWR MICRO FOOT | Vishay Siliconix
P-Channel 20 V 7.7A (Ta) 660mW (Ta) Surface Mount Power Micro Foot (2.4x2)
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Unit Price ($ / pc.)
0.09875 $
*
Available: 524 pcs.
Next delivery: 9954 pcs.
Available in 4 Weeks
Manufacturer Leadtime: 27 Weeks **
Quantity
Price per unit*
100 pcs.
0.093813 $
500 pcs.
0.088875 $
1000 pcs.
0.083938 $
3000 pcs.
0.079 $
10000 pcs.
0.074063 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The SI8851EDB-T2-E1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 30-XFBGA package by Vishay Siliconix made. The SI8851EDB-T2-E1 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Vishay Siliconix |
| Series | TrenchFET |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 7.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 7A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 8 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 6900 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 660mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | Power Micro Foot (2.4x2) |
| Package / Case | 30-XFBGA |
| Base Product Number | SI8851 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 3000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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