MOSFET N-CH 900V 9A TO3P | Toshiba Semiconductor and Storage
N-Channel 900 V 9A (Ta) 250W (Tc) Through Hole TO-3P(N)
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Unit Price ($ / pc.)
0.58176 $
*
Available: 531 pcs.
Next delivery: 10101 pcs.
Available in 4 Weeks
Manufacturer Leadtime: 16 Weeks **
Quantity
Price per unit*
100 pcs.
0.552672 $
500 pcs.
0.523584 $
1000 pcs.
0.494496 $
3000 pcs.
0.465408 $
10000 pcs.
0.43632 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The TK9J90E,S1E is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-3P-3, SC-65-3 package by Toshiba Semiconductor and Storage made. The TK9J90E,S1E is using SPQ 25 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 900 V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 4.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 900μA |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P(N) |
| Package / Case | TO-3P-3, SC-65-3 |
| Base Product Number | TK9J90 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 25 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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