MOSFET N-CH 30V 20A 8HSOP | Rohm Semiconductor
N-Channel 30 V 20A (Ta), 57A (Tc) 3W (Ta), 25W (Tc) Surface Mount 8-HSOP
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Unit Price ($ / pc.)
0.135 $
*
Available: 546 pcs.
Next delivery: 10416 pcs.
Available in 4 Weeks
Manufacturer Leadtime: 21 Weeks **
Quantity
Price per unit*
100 pcs.
0.12825 $
500 pcs.
0.1215 $
1000 pcs.
0.11475 $
3000 pcs.
0.108 $
10000 pcs.
0.10125 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The RS1E200GNTB is a common industry Single FETs, MOSFETs housed in a RoHS compliant 8-PowerTDFN package by Rohm Semiconductor made. The RS1E200GNTB is using SPQ 2500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Rohm Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 57A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 16.8 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1080 pF @ 15 V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 25W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-HSOP |
| Package / Case | 8-PowerTDFN |
| Base Product Number | RS1E |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 2500 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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