MOSFET N-CH 200V 12A TO220AB | Infineon Technologies
N-Channel 200 V 12A (Tc) 80W (Tc) Through Hole TO-220AB
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Unit Price ($ / pc.)
0.278345 $
*
Available: 575 pcs.
Next delivery: 11025 pcs.
Available in 5 Weeks
Manufacturer Leadtime: 12 Weeks **
Quantity
Price per unit*
100 pcs.
0.264428 $
500 pcs.
0.250511 $
1000 pcs.
0.236593 $
3000 pcs.
0.222676 $
10000 pcs.
0.208759 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The IRF200B211 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by Infineon Technologies made. The IRF200B211 is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Infineon Technologies |
| Series | HEXFET, StrongIRFET |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 7.2A, 10V |
| Vgs(th) (Max) @ Id | 4.9V @ 50μA |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 80W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Base Product Number | IRF200 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 50 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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