GANFET N-CH 600V 9A TO220-3 | onsemi

N-Channel 600 V 9A (Tc) 65W (Tc) Through Hole TO-220

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Unit Price ($ / pc.)
$ *
Available: 576 pcs.
Next delivery: 11046 pcs.
Available in 5 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
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500 pcs.
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1000 pcs.
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3000 pcs.
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10000 pcs.
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**Subject to prior sale
Description

The NTP8G202NG is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by onsemi made. The NTP8G202NG is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
Mfronsemi
Series-
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologyGaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)8V
Rds On (Max) @ Id, Vgs350mOhm @ 5.5A, 8V
Vgs(th) (Max) @ Id2.6V @ 500μA
Gate Charge (Qg) (Max) @ Vgs9.3 nC @ 4.5 V
Vgs (Max)±18V
Input Capacitance (Ciss) (Max) @ Vds760 pF @ 400 V
FET Feature-
Power Dissipation (Max)65W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
Base Product NumberNTP8G2
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 50 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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