MOSFET N-CH 650V 108A SOT227B | IXYS
N-Channel 650 V 108A (Tc) 890W (Tc) Chassis Mount SOT-227B
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Unit Price ($ / pc.)
17.6594 $
*
Available: 630 pcs.
Next delivery: 12180 pcs.
Available in 5 Weeks
Manufacturer Leadtime: 47 Weeks **
Quantity
Price per unit*
100 pcs.
16.77643 $
500 pcs.
15.89346 $
1000 pcs.
15.01049 $
3000 pcs.
14.12752 $
10000 pcs.
13.24455 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The IXFN120N65X2 is a common industry Single FETs, MOSFETs housed in a RoHS compliant SOT-227-4, miniBLOC package by IXYS made. The IXFN120N65X2 is using SPQ 10 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | IXYS |
| Series | HiPerFET, Ultra X2 |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 108A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 54A, 10V |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Gate Charge (Qg) (Max) @ Vgs | 225 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 15500 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 890W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Supplier Device Package | SOT-227B |
| Package / Case | SOT-227-4, miniBLOC |
| Base Product Number | IXFN120 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 10 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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