MOSFET N-CH 650V 8.7A TO252-3 | Infineon Technologies
N-Channel 650 V 8.7A (Tc) 83.3W (Tc) Surface Mount PG-TO252-3
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Unit Price ($ / pc.)
0.6305 $
*
Available: 646 pcs.
Next delivery: 12516 pcs.
Available in 5 Weeks
Manufacturer Leadtime: 20 Weeks **
Quantity
Price per unit*
100 pcs.
0.598975 $
500 pcs.
0.56745 $
1000 pcs.
0.535925 $
3000 pcs.
0.5044 $
10000 pcs.
0.472875 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The IPD65R420CFDAATMA1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-252-3, DPAK (2 Leads + Tab), SC-63 package by Infineon Technologies made. The IPD65R420CFDAATMA1 is using SPQ 2500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Infineon Technologies |
| Series | CoolMOS |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 3.4A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 345μA |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 83.3W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | IPD65R420 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 2500 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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