MOSFET N-CH 650V 22.4A TO220-3 | Infineon Technologies
N-Channel 650 V 22.4A (Tc) 195.3W (Tc) Through Hole PG-TO220-3
Images may differ 
Unit Price ($ / pc.)
1.48407 $
*
Available: 646 pcs.
Next delivery: 12516 pcs.
Available in 5 Weeks
Manufacturer Leadtime: 20 Weeks **
Quantity
Price per unit*
100 pcs.
1.409867 $
500 pcs.
1.335663 $
1000 pcs.
1.26146 $
3000 pcs.
1.187256 $
10000 pcs.
1.113053 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The IPP65R150CFDAAKSA1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by Infineon Technologies made. The IPP65R150CFDAAKSA1 is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Infineon Technologies |
| Series | CoolMOS |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 22.4A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 9.3A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 900μA |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2340 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 195.3W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3 |
| Package / Case | TO-220-3 |
| Base Product Number | IPP65R150 |
Download
Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 50 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
Search