MOSFET N-CH 650V 6A TO220-3 | Infineon Technologies
N-Channel 650 V 6A (Tc) 62.5W (Tc) Through Hole PG-TO220-3
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Unit Price ($ / pc.)
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Available: 646 pcs.
Next delivery: 12516 pcs.
Available in 5 Weeks
Manufacturer Leadtime: **
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100 pcs.
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500 pcs.
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3000 pcs.
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Description
The IPP65R660CFDAAKSA1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by Infineon Technologies made. The IPP65R660CFDAAKSA1 is using SPQ 500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Infineon Technologies |
| Series | CoolMOS |
| Package | Tube |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 660mOhm @ 3.2A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 200μA |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 543 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-3 |
| Package / Case | TO-220-3 |
| Base Product Number | IPP65R |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 500 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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