MOSFET P-CH 16V 2.5A X2-DFN2015 | Diodes Incorporated
P-Channel 16 V 2.5A (Ta) 650mW (Ta) Surface Mount X2-DFN2015-3
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Unit Price ($ / pc.)
0.057435 $
*
Available: 647 pcs.
Next delivery: 12537 pcs.
Available in 5 Weeks
Manufacturer Leadtime: 8 Weeks **
Quantity
Price per unit*
100 pcs.
0.054563 $
500 pcs.
0.051692 $
1000 pcs.
0.04882 $
3000 pcs.
0.045948 $
10000 pcs.
0.043076 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The DMG3415UFY4Q-7 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 3-XDFN package by Diodes Incorporated made. The DMG3415UFY4Q-7 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Diodes Incorporated |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 16 V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 4A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 282 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 650mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | X2-DFN2015-3 |
| Package / Case | 3-XDFN |
| Base Product Number | DMG3415 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 3000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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