MOSFET N-CH 650V 21A D2PAK | Vishay Siliconix
N-Channel 650 V 21A (Tc) 208W (Tc) Surface Mount TO-263 (D2PAK)
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Unit Price ($ / pc.)
1.18955 $
*
Available: 650 pcs.
Next delivery: 12600 pcs.
Available in 6 Weeks
Manufacturer Leadtime: 21 Weeks **
Quantity
Price per unit*
100 pcs.
1.130073 $
500 pcs.
1.070595 $
1000 pcs.
1.011118 $
3000 pcs.
0.95164 $
10000 pcs.
0.892163 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The SIHB21N65EF-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package by Vishay Siliconix made. The SIHB21N65EF-GE3 is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2322 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D2PAK) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Base Product Number | SIHB21 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 50 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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