MOSFET N-CH 650V 5.6A PPAK SO-8 | Vishay Siliconix
N-Channel 650 V 5.6A (Tc) 74W (Tc) Surface Mount PowerPAK SO-8
Images may differ
Unit Price ($ / pc.)
0.429375 $
*
Available: 660 pcs.
Next delivery: 12810 pcs.
Manufacturer Leadtime: 21 Weeks **
Description
The SIHJ6N65E-T1-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant PowerPAK SO-8 package by Vishay Siliconix made. The SIHJ6N65E-T1-GE3 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Vishay Siliconix |
Series | - |
Package | Tape & Reel (TR) |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 868mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 596 pF @ 100 V |
FET Feature | - |
Power Dissipation (Max) | 74W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK SO-8 |
Package / Case | PowerPAK SO-8 |
Base Product Number | SIHJ6 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 3000 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
Search
SIHJ6N65E-T1-GE3 ECAD module
SIHJ6N65E-T1-GE3 datesheet
SIHJ6N65E-T1-GE3 specification
SIHJ6N65E-T1-GE3 certificate
SIHJ6N65E-T1-GE3 supplier
SIHJ6N65E-T1-GE3 component
SIHJ6N65E-T1-GE3 substitute
SIHJ6N65E-T1-GE3 packaging