MOSFET N-CH 60V 260A 8DSOP | Toshiba Semiconductor and Storage
N-Channel 60 V 260A (Tc) 960mW (Ta), 170W (Tc) Surface Mount 8-DSOP Advance
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Unit Price ($ / pc.)
0.620545 $
*
Available: 668 pcs.
Next delivery: 12978 pcs.
Available in 6 Weeks
Manufacturer Leadtime: 32 Weeks **
Quantity
Price per unit*
100 pcs.
0.589518 $
500 pcs.
0.558491 $
1000 pcs.
0.527463 $
3000 pcs.
0.496436 $
10000 pcs.
0.465409 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The TPW1R306PL,L1Q is a common industry Single FETs, MOSFETs housed in a RoHS compliant 8-PowerWDFN package by Toshiba Semiconductor and Storage made. The TPW1R306PL,L1Q is using SPQ 5000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSIX-H |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 260A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.29mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8100 pF @ 30 V |
| FET Feature | - |
| Power Dissipation (Max) | 960mW (Ta), 170W (Tc) |
| Operating Temperature | 175°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DSOP Advance |
| Package / Case | 8-PowerWDFN |
| Base Product Number | TPW1R306 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 5000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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