MOSFET N-CH 600V 30.8A 4DFN | Toshiba Semiconductor and Storage
N-Channel 600 V 30.8A (Ta) 240W (Tc) Surface Mount 4-DFN-EP (8x8)
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Unit Price ($ / pc.)
0.96625 $
*
Available: 699 pcs.
Next delivery: 13629 pcs.
Available in 6 Weeks
Manufacturer Leadtime: 52 Weeks **
Quantity
Price per unit*
100 pcs.
0.917938 $
500 pcs.
0.869625 $
1000 pcs.
0.821313 $
3000 pcs.
0.773 $
10000 pcs.
0.724688 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The TK31V60W5,LVQ is a common industry Single FETs, MOSFETs housed in a RoHS compliant 4-VSFN Exposed Pad package by Toshiba Semiconductor and Storage made. The TK31V60W5,LVQ is using SPQ 2500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Toshiba Semiconductor and Storage |
| Series | DTMOSIV |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 30.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 109mOhm @ 15.4A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 300 V |
| FET Feature | - |
| Power Dissipation (Max) | 240W (Tc) |
| Operating Temperature | 150°C (TA) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-DFN-EP (8x8) |
| Package / Case | 4-VSFN Exposed Pad |
| Base Product Number | TK31V60 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 2500 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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