MOSFET N-CH 120V 35A TO252-3 | Infineon Technologies
N-Channel 120 V 35A (Tc) 71W (Tc) Surface Mount PG-TO252-3
Images may differ
Unit Price ($ / pc.)
0.329515 $
*
Available: 705 pcs.
Next delivery: 13755 pcs.
Manufacturer Leadtime: 12 Weeks **
Description
The IPD35N12S3L24ATMA1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-252-3, DPAK (2 Leads + Tab), SC-63 package by Infineon Technologies made. The IPD35N12S3L24ATMA1 is using SPQ 2500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Infineon Technologies |
Series | OptiMOS |
Package | Tape & Reel (TR) |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 120 V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 24mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 39μA |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 71W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
Base Product Number | IPD35N12 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 2500 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
Search
IPD35N12S3L24ATMA1 images
IPD35N12S3L24ATMA1 ECAD module
IPD35N12S3L24ATMA1 datesheet
IPD35N12S3L24ATMA1 specification
IPD35N12S3L24ATMA1 certificate
IPD35N12S3L24ATMA1 supplier
IPD35N12S3L24ATMA1 component
IPD35N12S3L24ATMA1 report
IPD35N12S3L24ATMA1 substitute
IPD35N12S3L24ATMA1 packaging
IPD35N12S3L24ATMA1 sources