MOSFET P-CH 20V 9.7A 4MICRO FOOT | Vishay Siliconix
P-Channel 20 V 9.7A (Tc) 2.8W (Tc) Surface Mount 4-MICRO FOOT (1.6x1.6)
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Unit Price ($ / pc.)
0.05555 $
*
Available: 720 pcs.
Next delivery: 14070 pcs.
Available in 6 Weeks
Manufacturer Leadtime: 18 Weeks **
Quantity
Price per unit*
100 pcs.
0.052773 $
500 pcs.
0.049995 $
1000 pcs.
0.047218 $
3000 pcs.
0.04444 $
10000 pcs.
0.041663 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The SI8481DB-T1-E1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 4-UFBGA package by Vishay Siliconix made. The SI8481DB-T1-E1 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Vishay Siliconix |
| Series | TrenchFET Gen III |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 3A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 4-MICRO FOOT (1.6x1.6) |
| Package / Case | 4-UFBGA |
| Base Product Number | SI8481 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 3000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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