MOSFET N-CH 650V 64A TO247AD | Vishay Siliconix
N-Channel 650 V 64A (Tc) 520W (Tc) Through Hole TO-247AD
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Unit Price ($ / pc.)
4.46673 $
*
Available: 720 pcs.
Next delivery: 14070 pcs.
Available in 6 Weeks
Manufacturer Leadtime: 28 Weeks **
Quantity
Price per unit*
100 pcs.
4.243394 $
500 pcs.
4.020057 $
1000 pcs.
3.796721 $
3000 pcs.
3.573384 $
10000 pcs.
3.350048 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The SIHW61N65EF-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-247-3 package by Vishay Siliconix made. The SIHW61N65EF-GE3 is using SPQ 480 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Vishay Siliconix |
| Series | E |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 30.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 371 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 7407 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AD |
| Package / Case | TO-247-3 |
| Base Product Number | SIHW61 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 480 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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