MOSFET N-CH 600V 29A 8HSOF | Infineon Technologies
N-Channel 600 V 29A (Tc) 167W (Tc) Surface Mount PG-HSOF-8-2
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Unit Price ($ / pc.)
1.81043 $
*
Available: 732 pcs.
Next delivery: 14322 pcs.
Available in 6 Weeks
Manufacturer Leadtime: 20 Weeks **
Quantity
Price per unit*
100 pcs.
1.719909 $
500 pcs.
1.629387 $
1000 pcs.
1.538866 $
3000 pcs.
1.448344 $
10000 pcs.
1.357823 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The IPT60R080G7XTMA1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 8-PowerSFN package by Infineon Technologies made. The IPT60R080G7XTMA1 is using SPQ 2000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Infineon Technologies |
| Series | CoolMOS G7 |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 9.7A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 490μA |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1640 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 167W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HSOF-8-2 |
| Package / Case | 8-PowerSFN |
| Base Product Number | IPT60R080 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 2000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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