MOSFET N-CH 600V 18A TO263 | Taiwan Semiconductor Corporation
N-Channel 600 V 18A (Tc) 150.6W (Tc) Surface Mount TO-263 (D2PAK)
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Available: 786 pcs.
Next delivery: 15456 pcs.
Manufacturer Leadtime: **
Description
The TSM60NB190CM2 RNG is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package by Taiwan Semiconductor Corporation made. The TSM60NB190CM2 RNG is using SPQ 800 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Taiwan Semiconductor Corporation |
Series | - |
Package | Tape & Reel (TR) |
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 190mOhm @ 6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1273 pF @ 100 V |
FET Feature | - |
Power Dissipation (Max) | 150.6W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263 (D2PAK) |
Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
Base Product Number | TSM60 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 800 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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