MOSFET N-CH 650V 7A TO220AB | Vishay Siliconix

N-Channel 650 V 7A (Tc) 78W (Tc) Through Hole TO-220AB

default L
Images may differ 
Unit Price ($ / pc.)
0.4949 $ *
Available: 806 pcs.
Next delivery: 15876 pcs.
Available in 7 Weeks
Manufacturer Leadtime: 28 Weeks **
Quantity
Price per unit*
100 pcs.
0.470155 $
500 pcs.
0.44541 $
1000 pcs.
0.420665 $
3000 pcs.
0.39592 $
10000 pcs.
0.371175 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The SIHP6N65E-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by Vishay Siliconix made. The SIHP6N65E-GE3 is using SPQ 1000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrVishay Siliconix
Series-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs48 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds820 pF @ 100 V
FET Feature-
Power Dissipation (Max)78W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3
Base Product NumberSIHP6
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 1000 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes