MOSFET N-CH 200V 35.8A TO220AB | Vishay Siliconix

N-Channel 200 V 35.8A (Tc) 125W (Tc) Through Hole TO-220AB

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Unit Price ($ / pc.)
0.30183 $ *
Available: 815 pcs.
Next delivery: 16065 pcs.
Available in 7 Weeks
Manufacturer Leadtime: 50 Weeks **
Quantity
Price per unit*
100 pcs.
0.286739 $
500 pcs.
0.271647 $
1000 pcs.
0.256556 $
3000 pcs.
0.241464 $
10000 pcs.
0.226373 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The SUP90330E-GE3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by Vishay Siliconix made. The SUP90330E-GE3 is using SPQ 500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrVishay Siliconix
SeriesThunderFET
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C35.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7.5V, 10V
Rds On (Max) @ Id, Vgs37.5mOhm @ 12.2A, 10V
Vgs(th) (Max) @ Id4V @ 250μA
Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1172 pF @ 100 V
FET Feature-
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3
Base Product NumberSUP90330
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 500 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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