MOSFET N-CH 45V 80A 8TSON | Toshiba Semiconductor and Storage
N-Channel 45 V 80A (Tc) 2.67W (Ta), 104W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
Images may differ 
Unit Price ($ / pc.)
0.155 $
*
Available: 830 pcs.
Next delivery: 16380 pcs.
Available in 7 Weeks
Manufacturer Leadtime: 12 Weeks **
Quantity
Price per unit*
100 pcs.
0.14725 $
500 pcs.
0.1395 $
1000 pcs.
0.13175 $
3000 pcs.
0.124 $
10000 pcs.
0.11625 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The TPN2R805PL,L1Q is a common industry Single FETs, MOSFETs housed in a RoHS compliant 8-PowerVDFN package by Toshiba Semiconductor and Storage made. The TPN2R805PL,L1Q is using SPQ 5000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSIX-H |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 45 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 40A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 300μA |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3200 pF @ 22.5 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.67W (Ta), 104W (Tc) |
| Operating Temperature | 175°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| Package / Case | 8-PowerVDFN |
| Base Product Number | TPN2R805 |
Download
Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 5000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
Search